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TN-MSP500S-DC
TN
This High Vacuum Single Target DC Magnetron Sputtering Coater is designed for professionals who require precise and high-quality thin film deposition. With its advanced technology, it allows for the preparation of single-layer or multi-layer ferroelectric thin films, conductive films, alloy films, semiconductor films, ceramic films, and more.
The stainless steel chamber of this coater ensures optimal conductivity, providing a stable and reliable environment for the deposition process. Its high vacuum capability allows for the removal of impurities, resulting in clean and pure thin films.
Equipped with a single target DC magnetron sputtering system, this coater offers precise and uniform film deposition. It allows for easy control of the deposition parameters, such as deposition rate, thickness, and composition, ensuring reproducibility and accuracy.
The High Vacuum Single Target DC Magnetron Sputtering Coater is user-friendly and easy to operate. It features a user-friendly interface that allows for convenient control and monitoring of the deposition process. Its compact design makes it suitable for both laboratory and industrial settings.
Whether you are working in research and development, materials science, or any other field that requires thin film deposition, this coater is the ideal choice. Its professional and reliable performance guarantees excellent results and meets the highest standards of quality and precision.
Invest in the High Vacuum Single Target DC Magnetron Sputtering Coater with Stainless Steel Chamber for Conductive today and experience efficient and precise thin film deposition like never before.
Technical parameters of single target magnetron sputtering coater:
Single target DC magnetron sputtering coating instrument | ||
Sample stage | Dimensions | φ185mm |
Heating range | Room temperature～500℃ | |
Adjustable speed | 1-20rpm adjustable | |
magnetic control target gun | Target plane | Circular plane target |
Sputtering vacuum | 10Pa～0.2Pa | |
Target diameter | 50～50.8mm | |
Target thickness | 2～5mm | |
Insulation voltage | >2000V | |
Cable specifications | SL-16 | |
Target head temperature | ≦65℃ | |
real null Cavity body | Inner wall treatment | Electrolytic polishing |
Cavity size | φ300mm × 300mm | |
Cavity material | 304 stainless steel | |
Observation window | Quartz window, diameter φ100mm | |
Open method | Top opening, cylinder auxiliary support | |
gas body control system | Flow control | Mass flow meter, range 0～200SCCM argon gas |
Control valve type | Solenoid valve | |
Control valve static state | Normally closed | |
Measuring linearity | ±1.5%F.S | |
Measurement repeatability | ±0.2%F.S | |
Measuring response time | ≤8 second（T95） | |
Working pressure range | 0.3MPa | |
Valve body pressure | 3MPa | |
Working temperature | （5～45）℃ | |
Body material | Stainless steel 316L | |
Valve body leakage rate | 1×10-8Pa.m3/s | |
Pipe joints | 1/4″Compression fitting | |
Input and output signal | 0～5V | |
Power supply | ±15V（±5%）（＋15V 50mA, －15V 200mA） | |
Overall dimensions mm | 130 (width) × 102 (height) × 28 (thickness) | |
Communication Interface | RS485 MODBUS protocol | |
DC power supply | Power | 500W |
Output voltage | 0～600V | |
Timing length | 65000 second | |
Start Time | 1～10 second | |
Film thickness measurement | Power requirements | DC:5V（±10%） Maximum current 400mA |
Resolution | ±0.03Hz(5-6MHz),0.0136Å / Measurement (aluminum) | |
Measurement accuracy | ±0.5% thickness + 1 count | |
Measurement period | 100mS～1S/time (can be set) | |
Measuring range | 500,000 Å (aluminum) | |
Crystal frequency | 6MHz | |
Communication Interface | RS-232/485 serial interface | |
Display digits | 8-digit LED display | |
Molecular pump | Molecular pump pumping speed | 80L/S |
Rated speed | 65000rpm | |
Vibration value | ≦0.1um | |
Start Time | ≦4.5min | |
Downtime | <7min | |
Cooling method | Air-cooled | |
Cooling water temperature | ≦37℃ | |
Cooling water flow rate | 1L/min | |
Installation direction | Vertical ±5° | |
Suction port | 150CF | |
Exhaust connection | KF40 | |
Fore pump | Pumping rate | 1.1L/S(VRD-4) |
Ultimate vacuum | 5×10-2Pa | |
Power supply | AC:220V/50Hz | |
Power | 400W | |
Noise | ≦56db | |
Suction port | KF40 | |
Exhaust connection | KF25 | |
Release valve | Pneumatic and electronically controlled air release valve is installed on the vacuum chamber | |
The ultimate vacuum of the whole machine | ≦5×10-4Pa | |
Vacuum chamber boost rate | ≦2.5Pa/h | |
Software system | 1 set of monitoring and management software | |
Test target | 2 copper targets with a diameter of 2 inches and a thickness of 3 mm | |
This High Vacuum Single Target DC Magnetron Sputtering Coater is designed for professionals who require precise and high-quality thin film deposition. With its advanced technology, it allows for the preparation of single-layer or multi-layer ferroelectric thin films, conductive films, alloy films, semiconductor films, ceramic films, and more.
The stainless steel chamber of this coater ensures optimal conductivity, providing a stable and reliable environment for the deposition process. Its high vacuum capability allows for the removal of impurities, resulting in clean and pure thin films.
Equipped with a single target DC magnetron sputtering system, this coater offers precise and uniform film deposition. It allows for easy control of the deposition parameters, such as deposition rate, thickness, and composition, ensuring reproducibility and accuracy.
The High Vacuum Single Target DC Magnetron Sputtering Coater is user-friendly and easy to operate. It features a user-friendly interface that allows for convenient control and monitoring of the deposition process. Its compact design makes it suitable for both laboratory and industrial settings.
Whether you are working in research and development, materials science, or any other field that requires thin film deposition, this coater is the ideal choice. Its professional and reliable performance guarantees excellent results and meets the highest standards of quality and precision.
Invest in the High Vacuum Single Target DC Magnetron Sputtering Coater with Stainless Steel Chamber for Conductive today and experience efficient and precise thin film deposition like never before.
Technical parameters of single target magnetron sputtering coater:
Single target DC magnetron sputtering coating instrument | ||
Sample stage | Dimensions | φ185mm |
Heating range | Room temperature～500℃ | |
Adjustable speed | 1-20rpm adjustable | |
magnetic control target gun | Target plane | Circular plane target |
Sputtering vacuum | 10Pa～0.2Pa | |
Target diameter | 50～50.8mm | |
Target thickness | 2～5mm | |
Insulation voltage | >2000V | |
Cable specifications | SL-16 | |
Target head temperature | ≦65℃ | |
real null Cavity body | Inner wall treatment | Electrolytic polishing |
Cavity size | φ300mm × 300mm | |
Cavity material | 304 stainless steel | |
Observation window | Quartz window, diameter φ100mm | |
Open method | Top opening, cylinder auxiliary support | |
gas body control system | Flow control | Mass flow meter, range 0～200SCCM argon gas |
Control valve type | Solenoid valve | |
Control valve static state | Normally closed | |
Measuring linearity | ±1.5%F.S | |
Measurement repeatability | ±0.2%F.S | |
Measuring response time | ≤8 second（T95） | |
Working pressure range | 0.3MPa | |
Valve body pressure | 3MPa | |
Working temperature | （5～45）℃ | |
Body material | Stainless steel 316L | |
Valve body leakage rate | 1×10-8Pa.m3/s | |
Pipe joints | 1/4″Compression fitting | |
Input and output signal | 0～5V | |
Power supply | ±15V（±5%）（＋15V 50mA, －15V 200mA） | |
Overall dimensions mm | 130 (width) × 102 (height) × 28 (thickness) | |
Communication Interface | RS485 MODBUS protocol | |
DC power supply | Power | 500W |
Output voltage | 0～600V | |
Timing length | 65000 second | |
Start Time | 1～10 second | |
Film thickness measurement | Power requirements | DC:5V（±10%） Maximum current 400mA |
Resolution | ±0.03Hz(5-6MHz),0.0136Å / Measurement (aluminum) | |
Measurement accuracy | ±0.5% thickness + 1 count | |
Measurement period | 100mS～1S/time (can be set) | |
Measuring range | 500,000 Å (aluminum) | |
Crystal frequency | 6MHz | |
Communication Interface | RS-232/485 serial interface | |
Display digits | 8-digit LED display | |
Molecular pump | Molecular pump pumping speed | 80L/S |
Rated speed | 65000rpm | |
Vibration value | ≦0.1um | |
Start Time | ≦4.5min | |
Downtime | <7min | |
Cooling method | Air-cooled | |
Cooling water temperature | ≦37℃ | |
Cooling water flow rate | 1L/min | |
Installation direction | Vertical ±5° | |
Suction port | 150CF | |
Exhaust connection | KF40 | |
Fore pump | Pumping rate | 1.1L/S(VRD-4) |
Ultimate vacuum | 5×10-2Pa | |
Power supply | AC:220V/50Hz | |
Power | 400W | |
Noise | ≦56db | |
Suction port | KF40 | |
Exhaust connection | KF25 | |
Release valve | Pneumatic and electronically controlled air release valve is installed on the vacuum chamber | |
The ultimate vacuum of the whole machine | ≦5×10-4Pa | |
Vacuum chamber boost rate | ≦2.5Pa/h | |
Software system | 1 set of monitoring and management software | |
Test target | 2 copper targets with a diameter of 2 inches and a thickness of 3 mm | |
