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TN-PECVD-T01
TN
The plasma enhancement CVD system consists of plasma generator, three-temperature tubular furnace, radio frequency power supply and vacuum system. Plasma enhanced CVD system in order to make the chemical reaction at lower temperature, the use of plasma activity to promote the reaction, so the CVD is called plasma enhanced chemical vapor deposition method (PECVD), the PECVD graphene film preparation equipment with the radio frequency output of 13.56Mhz make film atoms gas ionization, forming plasma, using plasma strong chemical activity, improve the reaction conditions, using the plasma activity to promote the reaction, deposit the desired film on the substrate.
PECVD application area:
Plasma-enhanced CVD system can be used in: graphene preparation, sulfide preparation, nanomaterials preparation and other test sites. SiOx, SiNx, amorphous silicon, microcrystalline silicon, nanosilicon, SiC, diamond-like films can be deposited on the surface of sheet or similar shapes, and p-type and n-type doped films can be deposited. The deposited films have good uniformity, tightness, adhesion, and insulation. It is widely used in cutting tool, high precision mold, hard coating, high duan decoration and other fields
PECVD technical parameters in the three-temperature zone:
Product name | PECVD |
Product model | TN-PECVD-T01 |
Three temperature area pipe furnace | Operating temperature: 0-1100℃ Temperature control accuracy: ± 1℃ Temperature control mode: AI-PID 30 section process curve, which can store multiple pieces Furnace tube material: high-purity quartz Furnace tube size: φ 50mm I.D x 1400mm L Heating temperature area: 200mm + 200mm + 200mm in the three-temperature area Sealing method: stainless steel vacuum flange Maximum vacuum degree: 4.4E-3Pa |
RF power supply | Output power: 0-300W maximum adjustable ± 1% RF frequency: 13.56MHz, stability ± 0.005% noise:≤55DB Cooling: air cooling |
Mass flowmeter | Three-way mass flowmeter Valve type: stainless steel needle valve Number of air roads: three roads Pressure range: -0.15Mpa~0.15Mpa range 1~200 SCCM 1~200 SCCM 1~500 SCCM Flow control range: ± 1.5% Gas path material: 304 stainless steel Pipe interface: 6.35mm card sleeve connector |
Vacuum and sub-atmospheric system | Equipped with a molecular pump system, using one-click operation 600L/S |
Water cooling system | CW-3200 |
Voltage | 220V 50HZ |
The plasma enhancement CVD system consists of plasma generator, three-temperature tubular furnace, radio frequency power supply and vacuum system. Plasma enhanced CVD system in order to make the chemical reaction at lower temperature, the use of plasma activity to promote the reaction, so the CVD is called plasma enhanced chemical vapor deposition method (PECVD), the PECVD graphene film preparation equipment with the radio frequency output of 13.56Mhz make film atoms gas ionization, forming plasma, using plasma strong chemical activity, improve the reaction conditions, using the plasma activity to promote the reaction, deposit the desired film on the substrate.
PECVD application area:
Plasma-enhanced CVD system can be used in: graphene preparation, sulfide preparation, nanomaterials preparation and other test sites. SiOx, SiNx, amorphous silicon, microcrystalline silicon, nanosilicon, SiC, diamond-like films can be deposited on the surface of sheet or similar shapes, and p-type and n-type doped films can be deposited. The deposited films have good uniformity, tightness, adhesion, and insulation. It is widely used in cutting tool, high precision mold, hard coating, high duan decoration and other fields
PECVD technical parameters in the three-temperature zone:
Product name | PECVD |
Product model | TN-PECVD-T01 |
Three temperature area pipe furnace | Operating temperature: 0-1100℃ Temperature control accuracy: ± 1℃ Temperature control mode: AI-PID 30 section process curve, which can store multiple pieces Furnace tube material: high-purity quartz Furnace tube size: φ 50mm I.D x 1400mm L Heating temperature area: 200mm + 200mm + 200mm in the three-temperature area Sealing method: stainless steel vacuum flange Maximum vacuum degree: 4.4E-3Pa |
RF power supply | Output power: 0-300W maximum adjustable ± 1% RF frequency: 13.56MHz, stability ± 0.005% noise:≤55DB Cooling: air cooling |
Mass flowmeter | Three-way mass flowmeter Valve type: stainless steel needle valve Number of air roads: three roads Pressure range: -0.15Mpa~0.15Mpa range 1~200 SCCM 1~200 SCCM 1~500 SCCM Flow control range: ± 1.5% Gas path material: 304 stainless steel Pipe interface: 6.35mm card sleeve connector |
Vacuum and sub-atmospheric system | Equipped with a molecular pump system, using one-click operation 600L/S |
Water cooling system | CW-3200 |
Voltage | 220V 50HZ |
