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TN-PECVD-50R-1200-Q
TN
on process. This system is designed for high-quality and uniform film deposition in research and industrial applications.
The PECVD tube furnace system features a high-temperature tube furnace capable of reaching temperatures up to 1200°C, allowing for precise control over the deposition process. The system also includes a gas delivery system for introducing precursor gases into the chamber, as well as a radio frequency (RF) power supply for generating plasma.
With its advanced design and precise control capabilities, the PECVD tube furnace system is ideal for depositing a wide range of thin films, including silicon dioxide, silicon nitride, and amorphous silicon. The system is commonly used in the fabrication of thin-film transistors, solar cells, and other electronic devices.
Overall, the PECVD tube furnace system offers researchers and manufacturers a reliable and efficient solution for thin film deposition, with the ability to produce high-quality films with excellent uniformity and reproducibility. Its advanced features and capabilities make it a valuable tool for a wide range of applications in the fields of materials science, nanotechnology, and semiconductor device fabrication.
Product name | PECVD tube furnace | |
Product name | TN-PECVD-50R-1200-Q | |
RF power supply | Output Power | 150W |
Output accuracy | ±1% | |
RF frequency | 13.56MHz | |
RF stability | ±0.005% | |
Cooling method | Air-cooling | |
1200℃ Single heating zone tube furnace | Supply voltage | AC220V, 50Hz |
Maximum power | 2KW | |
Heating zone | Single heating zone 200mm | |
Working temperature | Maximum 1200℃, continuous operating temperature should be ≤1100 ℃ | |
Temperature accuracy | ± 1 ℃ | |
Temperature control method | AI-PID 30-stage process curve, can store multiple Three temperature zone independent control, with overheat and thermocouple failure protection | |
Furnace tube material | High purity quartz | |
Furnace tube size | Dia. 50x800mm | |
Sealing method | Vacuum stainless steel flange, KF16 flange | |
Adjustable speed | 0-20rpm | |
Furnace tilt angle | 0-15° | |
Vacuum pump | Rotary vane mechanical pump | |
Ultimate vacuum | 1.0E-1Pa | |
Feeding method | Vacuum funnel and screw feed | |
on process. This system is designed for high-quality and uniform film deposition in research and industrial applications.
The PECVD tube furnace system features a high-temperature tube furnace capable of reaching temperatures up to 1200°C, allowing for precise control over the deposition process. The system also includes a gas delivery system for introducing precursor gases into the chamber, as well as a radio frequency (RF) power supply for generating plasma.
With its advanced design and precise control capabilities, the PECVD tube furnace system is ideal for depositing a wide range of thin films, including silicon dioxide, silicon nitride, and amorphous silicon. The system is commonly used in the fabrication of thin-film transistors, solar cells, and other electronic devices.
Overall, the PECVD tube furnace system offers researchers and manufacturers a reliable and efficient solution for thin film deposition, with the ability to produce high-quality films with excellent uniformity and reproducibility. Its advanced features and capabilities make it a valuable tool for a wide range of applications in the fields of materials science, nanotechnology, and semiconductor device fabrication.
Product name | PECVD tube furnace | |
Product name | TN-PECVD-50R-1200-Q | |
RF power supply | Output Power | 150W |
Output accuracy | ±1% | |
RF frequency | 13.56MHz | |
RF stability | ±0.005% | |
Cooling method | Air-cooling | |
1200℃ Single heating zone tube furnace | Supply voltage | AC220V, 50Hz |
Maximum power | 2KW | |
Heating zone | Single heating zone 200mm | |
Working temperature | Maximum 1200℃, continuous operating temperature should be ≤1100 ℃ | |
Temperature accuracy | ± 1 ℃ | |
Temperature control method | AI-PID 30-stage process curve, can store multiple Three temperature zone independent control, with overheat and thermocouple failure protection | |
Furnace tube material | High purity quartz | |
Furnace tube size | Dia. 50x800mm | |
Sealing method | Vacuum stainless steel flange, KF16 flange | |
Adjustable speed | 0-20rpm | |
Furnace tilt angle | 0-15° | |
Vacuum pump | Rotary vane mechanical pump | |
Ultimate vacuum | 1.0E-1Pa | |
Feeding method | Vacuum funnel and screw feed | |
