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Wafer Level Large-size Molybdenum Disulfide Preparation Device

This equipment is a wafer level large-size molybdenum disulfide preparation device designed based on CVD principles,It is the best choice for molybdenum disulfide preparation experiments.
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  • TN-O1200-120III-IC-3Z-MoS2

  • TN

This equipment is a wafer level large-size molybdenum disulfide preparation device designed based on CVD principles. It includes a three-zone tube furnace, a specially designed furnace tube and a set of supporting gas circuits. The equipment can uniformly release the reaction gas into the furnace tube through a specially designed pipeline to ensure the consistency and uniformity of the product on the back-end wafer. It is the best choice for molybdenum disulfide preparation experiments.

Technical parameters:

Product   model

TN-O1200-120III-IC-3Z-MoS2

Furnace   tube material

High   purity quartz

Furnace   tube size

External   large quartz tube φ120mm x1000mm

Internal   small quartz tube φ25mm x820mm x7

Temperature   zone length

Three   heating zone 200mm+200mm+200mm

Temperature   control accuracy

±1℃

Temperature   curve

Independent   temperature control in three temperature zones, each temperature zone can be   set with 30-segment time temperature curve

Operating   temperature

0~1150℃

Heating   rate

≤10℃/min

Intake   system

Three-channel   mass flow meter

Ar   gas 0~500sccm

N2   gas 0~200sccm

H2   gas 0~200sccm

Equipped   with seven channels of gas separation, gas mixing gas path.

Furnace   pipe flange

Stainless   steel water-cooled flange, equipped with KF16 vacuum interface, mechanical   vacuum gauge and stainless steel needle valve

Power   requirements

AC   220V 50Hz 4kW

Control   mode

7-inch   touch screen

Vacuum   pump

Dual   stage rotary vane vacuum pump

Vacuum

Theoretical   ultimate vacuum degree 10^-1Pa


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Zhengzhou Tainuo Thin Film Materials Co., Ltd.
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