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Introducing our Silicon Carbide (SiC) Sputtering Targets, the epitome of excellence in the field of thin film deposition. With a strong focus on precision and quality, our sputtering targets offer exceptional performance, making them the preferred choice for various applications in the semiconductor industry.
Crafted with utmost professionalism, our SiC Sputtering Targets are designed to meet the stringent requirements of modern thin film technology. These targets serve as the ideal source for depositing silicon carbide films through the sputtering process. Our advanced manufacturing techniques ensure the utmost purity and uniformity of the material, resulting in superior film quality and enhanced device performance.
In addition to SiC Sputtering Targets, we also offer a comprehensive range of evaporation sources and other deposition materials. These products are meticulously engineered to provide reliable and consistent results, enabling researchers and manufacturers to achieve precise thin film deposition in diverse applications.
With our commitment to excellence and customer satisfaction, we strive to deliver products that exceed expectations. Our SiC Sputtering Targets, evaporation sources, and deposition materials are trusted by leading research institutions and industrial partners worldwide. Backed by our team of experts and state-of-the-art facilities, we ensure that our products consistently meet the highest standards of quality and performance.
Choose our Silicon Carbide (SiC) Sputtering Targets, evaporation sources, and deposition materials for your thin film deposition needs, and experience the unparalleled precision and reliability that our products offer. Elevate your research and manufacturing processes with our professional-grade solutions, setting new benchmarks in the world of thin film technology.
Silicon Carbide (SiC) Specifications：
Material Type | Silicon Carbide |
Symbol | SiC |
Melting Point (°C) | ~2,700 |
Theoretical Density (g/cc) | 3.22 |
Z Ratio | **1.00 |
Sputter | RF |
Max Power Density (Watts/Square Inch) | 30* |
Type of Bond | Indium, Elastomer |
Comments | Sputtering preferred. |
Introducing our Silicon Carbide (SiC) Sputtering Targets, the epitome of excellence in the field of thin film deposition. With a strong focus on precision and quality, our sputtering targets offer exceptional performance, making them the preferred choice for various applications in the semiconductor industry.
Crafted with utmost professionalism, our SiC Sputtering Targets are designed to meet the stringent requirements of modern thin film technology. These targets serve as the ideal source for depositing silicon carbide films through the sputtering process. Our advanced manufacturing techniques ensure the utmost purity and uniformity of the material, resulting in superior film quality and enhanced device performance.
In addition to SiC Sputtering Targets, we also offer a comprehensive range of evaporation sources and other deposition materials. These products are meticulously engineered to provide reliable and consistent results, enabling researchers and manufacturers to achieve precise thin film deposition in diverse applications.
With our commitment to excellence and customer satisfaction, we strive to deliver products that exceed expectations. Our SiC Sputtering Targets, evaporation sources, and deposition materials are trusted by leading research institutions and industrial partners worldwide. Backed by our team of experts and state-of-the-art facilities, we ensure that our products consistently meet the highest standards of quality and performance.
Choose our Silicon Carbide (SiC) Sputtering Targets, evaporation sources, and deposition materials for your thin film deposition needs, and experience the unparalleled precision and reliability that our products offer. Elevate your research and manufacturing processes with our professional-grade solutions, setting new benchmarks in the world of thin film technology.
Silicon Carbide (SiC) Specifications：
Material Type | Silicon Carbide |
Symbol | SiC |
Melting Point (°C) | ~2,700 |
Theoretical Density (g/cc) | 3.22 |
Z Ratio | **1.00 |
Sputter | RF |
Max Power Density (Watts/Square Inch) | 30* |
Type of Bond | Indium, Elastomer |
Comments | Sputtering preferred. |
