TN
The ion source consists of an independent discharge chamber and a double-gate ion extraction system. During operation, gas is introduced into the discharge chamber and ionized to form plasma. The ions enter the double-gate acceleration zone through the sheath, converge into an ion beam, and are extracted. The energetic ions continuously act on the surface of the substrate or the film layer to achieve the effects of cleaning the surface and improving the structure of the film layer.
Product function:
1. Improve the bonding force of the film layer; 2. Improve the density of the film layer; 3. Reduce absorption. 4. Etching; 5. Sputtering.
Features:
1. High ion energy: up to 600eV, 1200eV, 2000eV or higher;
2. High working vacuum: can work within 10-3Pa to ensure the quality of the film layer;
3. Significant effect: It has a significant effect in improving the density, firmness and refractive index of the film layer;
4. Easy to use: The new structure solves the original problems of cumbersome disassembly, maintenance and installation of grids and anodes;
5. High cost performance: Compared with RF ion sources, the price, operation and maintenance costs of this source are very low.
Technical Parameters:
Auxiliary | Sputtering type | |
Ion energy | 0--600 (eV) | 0--1000 /2000(eV) |
Ion beam | 0--100 (mA) | 0--100 (mA) |
Applicable cabinet | Ø600 (mm,Max) | Ø600 (mm,Max) |
The ion source consists of an independent discharge chamber and a double-gate ion extraction system. During operation, gas is introduced into the discharge chamber and ionized to form plasma. The ions enter the double-gate acceleration zone through the sheath, converge into an ion beam, and are extracted. The energetic ions continuously act on the surface of the substrate or the film layer to achieve the effects of cleaning the surface and improving the structure of the film layer.
Product function:
1. Improve the bonding force of the film layer; 2. Improve the density of the film layer; 3. Reduce absorption. 4. Etching; 5. Sputtering.
Features:
1. High ion energy: up to 600eV, 1200eV, 2000eV or higher;
2. High working vacuum: can work within 10-3Pa to ensure the quality of the film layer;
3. Significant effect: It has a significant effect in improving the density, firmness and refractive index of the film layer;
4. Easy to use: The new structure solves the original problems of cumbersome disassembly, maintenance and installation of grids and anodes;
5. High cost performance: Compared with RF ion sources, the price, operation and maintenance costs of this source are very low.
Technical Parameters:
Auxiliary | Sputtering type | |
Ion energy | 0--600 (eV) | 0--1000 /2000(eV) |
Ion beam | 0--100 (mA) | 0--100 (mA) |
Applicable cabinet | Ø600 (mm,Max) | Ø600 (mm,Max) |